Resistive Switching Memory Devices Based on PbS Quantum Dots

被引：0

作者：

Chen, Zhiliang ^{[1
]}

Zhang, Yating ^{[1
]}

Yu, Yu ^{[1
]}

Jin, Lufan ^{[1
]}

Li, Yifan ^{[1
]}

Yao, Jianquan ^{[1
]}

机构：

[1] Tianjin Univ, Key Lab Optoelect Informat Technol, Minist Educ, Sch Precis Instruments & Optoelect Engn, Tianjin 300072, Peoples R China

来源：

OPTOELECTRONIC DEVICES AND INTEGRATION VIII | 2019年 / 11184卷

基金：

中国国家自然科学基金;

关键词：

Resistive switching memory; quantum dots; PbS; PMMA; PHOTOTRANSISTORS;

D O I：

10.1117/12.2538555

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Quantum dots have widely used in a lot of micro-nano photoelectric devices. In this work, PbS quantum dots have been synthesized successfully then a RRAM based on those quantum dots and PMMA mixture material was prepared by solution processed method at room temperature. We have demonstrated that the memory device shows typical resistance switching characteristic and high resistance ratio (>10(4)). To study the quantum dots based RRAM provides an opportunity to develop the next generation high-performance memory devices and open up a new application field of QDs materials in the future.

引用

页数：6

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