Side Excited Spoof Localized Surface Plasmonic Resonator with ultra-high Q factor

Here a highly integrated spoof plasmonic resonator with ultra-high quality (Q) factor has been demonstrated. The spoof plasmonic resonator is composed of the grooved metal ring and the excited microstrip line structure on the same side of the dielectric substrate with ground. It has been shown that the Q factor of the Octupole mode on the resonator reaches up to 1115.5, which is much larger than the previous work. Simulation and experiments at the microwave frequencies agree well and verify the function. Hence, the integrated spoof plasmonic resonator may have potential application as plasmonic sensors.