Epitaxial growth of CaF2(111) on Cu(111) visualized by STM

被引:11
|
作者
Calleja, F
Hinarejos, JJ
de Parga, ALV
Suturin, SM
Sokolov, NS
Miranda, R
机构
[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Inst Ciencia Mat Nicolas Cabera, E-28049 Madrid, Spain
[3] AF Ioffe Phys Tech Inst, Lab Spectroscopy Solid State, St Petersburg 194021, Russia
关键词
scanning tunneling microscopy; growth; surface structure; morphology; roughness and topography; copper; high index single crystal surfaces; insulating films;
D O I
10.1016/j.susc.2005.03.003
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The initial stages of the growth of CaF2 on Cu(111) have been studied by STM as a function of deposition temperature and coverage. No evidence for a reaction between the CaF2 molecules and the Cu substrate has been found. The islands formed at 700 K and above show uniform heights, triangular shapes with two orientations rotated by 60 degrees and flat top surfaces. They can not be imaged at voltages below +3 V indicating their insulating character. The LEED pattern shows that the film is epitaxial, (111)- oriented and in registry with the substrate. The observations indicate that epitaxial growth of twinned crystallites of CaF,(111) takes place on Cu(111). (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:14 / 20
页数:7
相关论文
共 50 条
  • [31] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON CAF2/SI(111) SUBSTRATE
    LI, WD
    ANAN, T
    SCHOWALTER, LJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1067 - 1070
  • [32] THE RELATIONSHIP OF GROWTH-PARAMETERS TO ELECTRICAL CHARACTERISTICS IN EPITAXIAL CAF2 FILMS ON SI(111)
    FATHAUER, RW
    SCHOWALTER, LJ
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 304 - 305
  • [33] Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces
    Kim, BM
    Ventrice, CA
    Mercer, T
    Overney, R
    Schowalter, LJ
    APPLIED SURFACE SCIENCE, 1996, 104 : 409 - 416
  • [34] Growth and microstructure of Si/CaF2/Si(111) heterostructures
    Gribelyuk, MA
    Wilk, GD
    THIN SOLID FILMS, 1999, 339 (1-2) : 51 - 57
  • [35] MBE growth of PbSe/CaF2/Si(111) heterostructures
    McCann, PJ
    Fang, XM
    Liu, WK
    Strecker, BN
    Santos, MB
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 1057 - 1062
  • [36] STRAIN RELIEF DURING GROWTH - CAF2 ON SI(111)
    TROMP, RM
    LEGOUES, FK
    REUTER, MC
    PHYSICAL REVIEW LETTERS, 1995, 74 (14) : 2706 - 2709
  • [37] NEW INSIGHT INTO THE STRUCTURE AND GROWTH OF CAF2/SI(111)
    LUCAS, CA
    LORETTO, D
    APPLIED PHYSICS LETTERS, 1992, 60 (17) : 2071 - 2073
  • [38] Growth and microstructure of Si/CaF2/Si(111) heterostructures
    Gribelyuk, MA
    Wilk, GD
    ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, : 441 - 442
  • [39] Influence of Fe and Cu seed layers on the magnetoresistance in Fe/Cu superlattices grown on Si(111) and CaF2(111)/Si(111)
    Mosca, DH
    Mattoso, N
    Kakuno, EM
    Schreiner, WH
    Mazzaro, I
    Teixeira, SR
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1996, 156 (1-3) : 391 - 393
  • [40] Influence of Fe and Cu seed layers on the magnetoresistance in Fe/Cu superlattices grown on Si(111) and CaF2(111)/Si(111)
    DF-UFPR, Curitiba, Brazil
    J Magn Magn Mater, 1-3 (391-393):