Effect of structural inhomogeneities on the dynamic stability of the photoelectric response of Cd0.9Zn0.1Te crystals

被引:4
|
作者
Migal, V. P. [1 ]
Fomin, A. S. [1 ]
机构
[1] Zhukovsky State Aerosp Univ, UA-61070 Kharkov, Ukraine
关键词
Phase Diagram; Dynamic Stability; Phase Trajectory; Structural Inhomogeneity; Linear Heating;
D O I
10.1134/S0020168507110040
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
I(t)-dI/dt phase diagrams obtained under local and integral photoexcitation have been used to investigate the stability of the dynamic photoresponse of Cd0.9Zn0.1 Te crystals containing two-dimensional structural defects and defect complexes. The results demonstrate that the diagrams shed light on the development and loss of the dynamic stability of the photoelectric response under photoexcitation with rectangular light pulses in combination with linear heating in the temperature range 293-450 K.
引用
收藏
页码:1179 / 1183
页数:5
相关论文
共 50 条
  • [31] Pt coldfinger improves quality of Bridgman-grown Cd0.9Zn0.1Te:Bi crystals
    Carcelen, V.
    Kim, K. H.
    Camarda, G. S.
    Bolotnikov, A. E.
    Hossain, A.
    Yang, G.
    Crocco, J.
    Bensalah, H.
    Dierre, F.
    Dieguez, E.
    James, R. B.
    JOURNAL OF CRYSTAL GROWTH, 2012, 338 (01) : 1 - 5
  • [32] Electrical Resistivity Studies on Cd0.9Zn0.1Te Single Crystals Grown by Travelling Heater Method
    Vijayakumar, P.
    Amaladass, E. P.
    Ganesan, K.
    Sarguna, R. M.
    Chinnathambi, S.
    Ganesamoorthy, S.
    Sridharan, V
    Mani, Awadhesh
    Subramanian, N.
    DAE SOLID STATE PHYSICS SYMPOSIUM 2019, 2020, 2265
  • [33] CdTe and Cd0.9Zn0.1Te crystal growth and characterization for nuclear spectrometers
    Mandal, Krishna C.
    Kang, Sung Hoon
    Choi, Michael
    Wright, Gomez
    Jellison, Gerald E.
    HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS AND PENETRATING RADIATION SYSTEMS VIII, 2006, 6319
  • [34] Raman scattering studies on polycrystalline Cd0.9Zn0.1Te thin films
    Sridharan, MG
    Mekaladevi, M
    Narayandass, SK
    Mangalaraj, D
    Lee, HC
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (03): : 1479 - 1482
  • [35] Simulation, modeling, and crystal growth of Cd0.9Zn0.1Te for nuclear spectrometers
    Mandal, Krishna C.
    Kang, Sung Hoon
    Choi, Michael
    Bello, Job
    Zheng, Lili
    Zhang, Hui
    Groza, Chael
    Roy, Utpal N.
    Burger, Arnold
    Jellison, Gerald E.
    Holcomb, David E.
    Wright, Gomez W.
    Williams, Joseph A.
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (06) : 1251 - 1256
  • [36] Electrical measurements of structural defects in Cd0.9Zn0.1Te by atomic force microscopy based methods
    Ruzin, A
    Torchinski, I
    Goldfarb, I
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (05) : 644 - 647
  • [37] Effect of Oxygen-Related Defects on Electrical Properties of Cd0.9Zn0.1Te Semiconductor
    Yu, Haiwen
    Liu, Hongguang
    Chen, Jianquan
    Jia, Ningbo
    Wang, Miao
    Yang, Mei
    Zhang, Quanchao
    Wang, Tao
    Yang, Fan
    Jie, Wanqi
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (08) : 1996 - 2002
  • [38] Current mode operation of a Cd0.9Zn0.1Te detector for CT imaging
    Barber, WC
    Iwata, K
    Hasegawa, BH
    Bennett, PR
    Cirignano, LJ
    Shah, KS
    PENETRATING RADIATION SYSTEMS AND APPLICATIONS IV, 2002, 4786 : 144 - 150
  • [39] Simulation, modeling, and crystal growth of Cd0.9Zn0.1Te for nuclear spectrometers
    Krishna C. Mandal
    Sung Hoon Kang
    Michael Choi
    Job Bello
    Lili Zheng
    Hui Zhang
    Michael Groza
    Utpal N. Roy
    Arnold Burger
    Gerald E. Jellison
    David E. Holcomb
    Gomez W. Wright
    Joseph A. Williams
    Journal of Electronic Materials, 2006, 35 : 1251 - 1256
  • [40] X-ray diffraction of Cd0.9Zn0.1Te at room temperature
    Nkum, RK
    DISCOVERY AND INNOVATION, 1997, 9 (3-4): : 213 - 216