Photoelectron diffraction study on the epitaxial growth of SrF2 on Ge(111)-c(2x8)

被引：7

作者：

Omori, S ^{[1
]}

Ishii, H ^{[1
]}

Nihei, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

关键词：

X-ray photoelectron diffraction; semiconductor-insulator interfaces; epitaxy; germanium; halides;

D O I：

10.1016/S0169-4332(98)00026-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The initial stages of epitaxy of SrF(2) on Ge(111)-c(2 X 8) have been studied by X-ray photoelectron diffraction (XPED). Forward-scattering peaks along the emitter-scatterer axes have been effectively used to determine the morphology of the overlayer. In addition, multiple-scattering analysis of the two-dimensional XPED patterns for the overlayer emission has provided the information on the average domain size of SrF(2) islands. The epitaxy of SrF(2) on Ge(111) has been characterized by (1) the 180 degrees azimuthal rotation of the overlayer relative to the substrate, (2) formation of small SrF(2) (111) islands of similar to 2 TL (triple-layer) in thickness at deposited coverages below 1 TL-equivalent, and (3) aggregation of the islands into relatively large domains with the average height of similar to 2 TL unchanged at coverages up to 2 TL-equivalent. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：67 / 71

页数：5

共 50 条

[1] Epitaxial growth of SrF2 on Ge(111)-c(2x8) as studied by photoelectron diffraction and holography
Omori, S
Kozakai, T
Nihei, Y
SURFACE REVIEW AND LETTERS, 1999, 6 (06) : 1085 - 1089
[2] Photoelectron diffraction study on the epitaxial growth of SrF2 on Ge(111)-c(2×8)
Omori, S.
Ishii, H.
Nihei, Y.
Applied Surface Science, 1998, 130-132 : 67 - 71
[3] Photoelectron diffraction study of the initial-stage growth of Cu on Ge(111)-c(2x8)
Omori, S
Narimatsu, A
Suzuki, T
Nihei, Y
SURFACE REVIEW AND LETTERS, 1999, 6 (06) : 1079 - 1083
[4] Epitaxial Growth of Ge Nanofilms on the Surface of SrF2
S. T. Abraeva
D. A. Tashmukhamedova
B. E. Umirzakov
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2023, 17 : S329 - S332
[5] Epitaxial Growth of Ge Nanofilms on the Surface of SrF2
Abraeva, S. T.
Tashmukhamedova, D. A.
Umirzakov, B. E.
JOURNAL OF SURFACE INVESTIGATION, 2023, 17 (SUPPL 1): : S329 - S332
[6] THE LOST SYMMETRY OF GE(111)-C(2X8)
MOLINASMATA, P
ZEGENHAGEN, J
SOLID STATE COMMUNICATIONS, 1992, 84 (04) : 393 - 396
[7] Epitaxial growth of Fe nanodots on SrF2/Si (111)
Hosoya, H.
Arita, M.
Hamada, K.
Takahashi, Y.
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 1146 - 1150
[8] STRUCTURE AND ENERGETICS OF GE(111)C(2X8) RECONSTRUCTION
VERWOERD, WS
BADZIAG, P
VACUUM, 1990, 41 (1-3) : 602 - 604
[9] DEFECTS OF GE(111)-C(2X8) - STRUCTURAL AND ELECTRONIC CHARACTERIZATION
MOLINASMATA, P
ZEGENHAGEN, J
SURFACE SCIENCE, 1993, 281 (1-2) : 10 - 20
[10] ELECTRONIC-STRUCTURE OF THE GE(111)-C(2X8) SURFACE
AARTS, J
HOEVEN, AJ
LARSEN, PK
PHYSICAL REVIEW B, 1988, 37 (14): : 8190 - 8197

← 1 2 3 4 5 →