Epitaxial Growth of Ge Nanofilms on the Surface of SrF2

The composition, structure, and optical parameters of a SrF2(111) single-crystal sample with a surface Ge nanofilm are studied using Auger-electron spectroscopy (in combination with surface etching with Ar+ ions and measuring the angular dependences of the coefficient of inelastic electron ref lection eta) and light-absorption spectroscopy. It is shown for the first time that preliminary bombardment of the SrF2 surface with Ar+ ions with E-0 = 1 keV at T = 750 K makes it possible to obtain homogeneous epitaxial Ge nano films starting from a thickness of 30 & Aring;. It is assumed that the transition layer formed at the Ge-SrF2 interface alsohas a cubic lattice with a parameter close to the lattice constants of Ge and SrF2.