Dose monitoring of heavy ion implantation by Therma-Wave signal

被引：0
|
作者：
Sano, M [1 ]
Harada, M [1 ]
Kabasawa, M [1 ]
Sato, F [1 ]
Sugitani, M [1 ]
机构：
[1] Sumitomo Eaton Nova Corp, Prod Engn, Toyo, Ehime 7991362, Japan
来源：
IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2003年
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Dosimetry of ion implantation is monitored mainly by Therma-Wave (TW) signals for low-medium dose ranges. Repeatability and uniformity of TW signals for indiurn (In) and antimony (Sb) implantation were researched in order to improve dose monitoring accuracy. It was found that TW signals were influenced considerably by implant conditions, wafer surface status, and TW measurement parameters. Because TW signals have high dose sensitivity in some ranges of In and Sb implantation, TW signals became a good tool of dose monitoring of such heavy ions by establishing appropriate management of the above conditions.
引用
收藏
页码：248 / 251
页数：4
相关论文
共 50 条
  • [31] High-dose ion implantation into metals
    Lavrentiev, V.I.
    Pogrebnjak, A.D.
    Surface and Coatings Technology, 1998, 99 (1-2): : 24 - 32
  • [32] HIGH DOSE EFFECTS IN ION-IMPLANTATION
    DVURECHENSKY, AV
    GERASIMENKO, NN
    ROMANOV, SI
    SMIRNOV, LS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02): : 69 - 71
  • [33] DAMAGE FORMED BY ION-IMPLANTATION IN SILICON EVALUATED BY DISPLACED ATOM DENSITY AND THERMAL WAVE SIGNAL
    HARA, T
    TAKAHASHI, S
    HAGIWARA, H
    HIYOSHI, J
    SMITH, WL
    WELLES, C
    HAHN, SK
    LARSON, L
    WONG, CCD
    APPLIED PHYSICS LETTERS, 1989, 55 (13) : 1315 - 1317
  • [34] HIGH-DOSE, HEAVY-ION IMPLANTATION INTO METALS - THE USE OF A SACRIFICIAL CARBON SURFACE-LAYER FOR INCREASED DOSE RETENTION
    CLAPHAM, L
    WHITTON, JL
    RIDGWAY, MC
    HAUSER, N
    PETRAVIC, M
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) : 4014 - 4019
  • [35] Non-contact, in-line monitoring of low dose and low energy ion implantation.
    Santiesteban, RS
    DeBusk, DK
    Ramappa, DA
    Moller, WM
    2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 607 - 610
  • [36] Monitoring of ion mass composition in plasma immersion ion implantation
    Kim, GH
    Rim, GH
    Nikiforov, SA
    SURFACE & COATINGS TECHNOLOGY, 2001, 136 (1-3): : 255 - 260
  • [37] Metal contamination monitoring in ion implantation technology
    Colelli, E
    Galbiati, A
    Caputo, D
    Polignano, ML
    Soncini, V
    Salva, G
    2003 8TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE, 2003, : 81 - 84
  • [38] A new tool for nondestructive monitoring of ion implantation
    Coleman, PG
    Burrows, CP
    Knights, AP
    Gwilliam, RM
    Sealy, BJ
    2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 654 - 657
  • [39] RF characteristics of IHQ linac for heavy ion implantation
    Ito, T
    Osvath, E
    Sasa, K
    Hayashizaki, N
    Isokawa, K
    Schubert, H
    Hattori, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 139 (1-4): : 401 - 404
  • [40] RF characteristics of IHQ linac for heavy ion implantation
    Tokyo Inst of Technology, Tokyo, Japan
    Nucl Instrum Methods Phys Res Sect B, 1-4 (401-404):
12345