Optical Coherent Control Induced by an Electric Field in a Semiconductor: A New Manifestation of the Franz-Keldysh Effect

被引：10
|
作者：
Wahlstrand, J. K. [1 ]
Zhang, H. [1 ,2 ]
Choi, S. B. [1 ]
Kannan, S. [1 ,3 ]
Dessau, D. S. [1 ,3 ]
Sipe, J. E. [1 ,4 ]
Cundiff, S. T. [1 ,2 ,3 ]
机构：
[1] Natl Inst Stand & Technol, JILA, Boulder, CO 80309 USA
[2] Univ Colorado, Dept Elect Comp & Energy Engn, Boulder, CO 80309 USA
[3] Univ Colorado, Dept Phys, Boulder, CO 80309 USA
[4] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
来源：
PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 24期
关键词：
PHASE; INTERFERENCE; GENERATION; CARRIER; GAAS;
D O I：
10.1103/PhysRevLett.106.247404
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In (100)-oriented GaAs illuminated at normal incidence by a laser and its second harmonic, interference between one- and two-photon absorption results in ballistic current injection, but not modulation of the overall carrier injection rate. Results from a pump-probe experiment on a transversely biased sample show that a constant electric field enables coherent control of the carrier injection rate. We ascribe this to the nonlinear optical Franz-Keldysh effect and calculate it for a two-band parabolic model. The mechanism is relevant to centrosymmetric semiconductors as well.
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页数：4
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