Optical Coherent Control Induced by an Electric Field in a Semiconductor: A New Manifestation of the Franz-Keldysh Effect

被引：10

作者：

Wahlstrand, J. K. ^{[1
]}

Zhang, H. ^{[1
,2
]}

Choi, S. B. ^{[1
]}

Kannan, S. ^{[1
,3
]}

Dessau, D. S. ^{[1
,3
]}

Sipe, J. E. ^{[1
,4
]}

Cundiff, S. T. ^{[1
,2
,3
]}

机构：

[1] Natl Inst Stand & Technol, JILA, Boulder, CO 80309 USA

[2] Univ Colorado, Dept Elect Comp & Energy Engn, Boulder, CO 80309 USA

[3] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

[4] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 24期

关键词：

PHASE; INTERFERENCE; GENERATION; CARRIER; GAAS;

D O I：

10.1103/PhysRevLett.106.247404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In (100)-oriented GaAs illuminated at normal incidence by a laser and its second harmonic, interference between one- and two-photon absorption results in ballistic current injection, but not modulation of the overall carrier injection rate. Results from a pump-probe experiment on a transversely biased sample show that a constant electric field enables coherent control of the carrier injection rate. We ascribe this to the nonlinear optical Franz-Keldysh effect and calculate it for a two-band parabolic model. The mechanism is relevant to centrosymmetric semiconductors as well.

引用

页数：4

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