Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in thermoelectric generators

被引：28
|
作者：
Andzane, J. [1 ]
Felsharuk, A. [1 ,3 ]
Sarakovskis, A. [4 ]
Malinovskis, U. [1 ]
Kauranens, E. [1 ]
Bechelany, M. [5 ]
Niherysh, K. A. [1 ,3 ]
Komissarov, I. V. [3 ]
Erts, D. [1 ,2 ]
机构：
[1] Inst Chem Phys, LV-1586 Riga, Latvia
[2] Univ Latvia, Fac Chem, LV-1586 Riga, Latvia
[3] Belarusian State Univ Informat & Radioelect, Minsk, BELARUS
[4] Univ Latvia, Inst Solid State Phys, LV-1063 Riga, Latvia
[5] Univ Montpellier, Inst Europeen Membranes IEM, CNRS, ENSCM,UMR 5635, Montpellier, France
来源：
MATERIALS TODAY ENERGY | 2021年 / 19卷
基金：
欧盟地平线“2020”;
关键词：
Ultrathin film; Narrow band gap layered semiconductor; Bismuth chalcogenide; Antimony telluride; Thickness-dependent thermoelectric properties; 3-DIMENSIONAL TOPOLOGICAL INSULATOR; THIN-FILMS; BI2SE3; SB2TE3; BI2TE3; TRANSPORT; FIGURE;
D O I：
10.1016/j.mtener.2020.100587
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work, a simple cost-effective physical vapor deposition method for obtaining high-quality Bi2Se3 and Sb2Te3 ultrathin films with thicknesses down to 5 nm on mica, fused quartz, and monolayer graphene substrates is reported. Physical vapor deposition of continuous Sb2Te3 ultrathin films with thicknesses 10 nm and below is demonstrated for the first time. Studies of thermoelectrical properties of synthesized Bi2Se3 ultrathin films deposited on mica indicated opening of a hybridization gap in Bi2Se3 ultrathin films with thicknesses below 6 nm. Both Bi2Se3 and Sb2Te3 ultrathin films showed the Seebeck coefficient and thermoelectrical power factors comparable with the parameters obtained for the high-quality thin films grown by the molecular beam epitaxy method. Performance of the best Bi2Se3 and Sb2Te3 ultrathin films is tested in the two-leg prototype of a thermoelectric generator. (C) 2020 Elsevier Ltd. All rights reserved.
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页数：10
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