Diethynyl naphthalene derivatives with high ionization potentials for p-channel and n-channel organic field-effect transistors

被引：11
|
作者：
Yasuda, Takeshi [1 ]
Kashiwagi, Kimiaki
Morizawa, Yoshitomi
Tsutsui, Tetsuo
机构：
[1] Kyushu Univ, Inst Mat Chem & Engn, Fukuoka 8168580, Japan
[2] Kyushu Univ, Grad Sch Engn Sci, Fukuoka 8168580, Japan
[3] Asahi Glass Co Ltd, Res Ctr, Kanagawa 2218755, Japan
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 15期
关键词：
D O I：
10.1088/0022-3727/40/15/014
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed and characterized diethynyl naphthalene derivatives with high ionization potentials, 2,6-bis [(naphthalen-2-yl) ethynyl]-naphthalene (BH-202) and 2,6-bis[(heptafluoronaphthalen-2-yl) ethynyl]-naphthalene (BF-202) for new organic semiconductors. Using x-ray diffraction, we have found that thin films of the two organic semiconductors have a high degree of molecular order. Organic field-effect transistors (OFETs) with BH-202 films showed p-type characteristics. By the optimization of the fabrication process, the device exhibited a high field-effect hole mobility up to 0.12 cm(2) V-1 s(-1) and a high on/off current ratio of 3.3 x 10(5). On the other hand, OFETs with BF-202 films showed n-type characteristics. The field-effect electron mobility was calculated to be 3.4 x 10(-3) cm(2) V-1 s(-1) and the on/off current ratio was 5.4 x 10(3).
引用
收藏
页码：4471 / 4475
页数：5
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