Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors

被引:0
|
作者
Kumngern, Montree [1 ]
Khateb, Fabian [2 ]
机构
[1] King Mongkuts Inst Technol Ladkrabang, Fac Engn, Dept Telecommun Engn, Bangkok 10520, Thailand
[2] Brno Univ Technol, Dept Microelect, Brno, Czech Republic
关键词
floating-gate technique; fully differential difference transconductance amplifier; low-voltage and low-power circuit; RANGE; BLOCK;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a fully differential difference transconductance amplifier for applications to low-voltage and low-power analogue circuits. Differential difference input voltage can be obtained using floating-gate MOS transistor technique and it can be taken also the possibility of low supply voltage of the circuit. The proposed active building block has been simulated using TSMC 0.18 mu m n-well CMOS technology. The circuit uses +/- 0.4 V supply voltage and consumes a 27 mu W of static power. A fully differential universal filter using proposed circuit as active device was presented as an example application.
引用
收藏
页码:337 / 341
页数:5
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