Optimizing the combination of MoO3 interface layer and low pressure plasma treatment on indium tin oxide (ITO) anode

被引：1
|
作者：
Jiang, Yunlong [1 ,2 ,3 ]
Cui, Yingjie [3 ]
Cui, Xi [3 ]
Zhang, Yu [2 ]
Zhou, Liang [3 ]
Feng, Yi [1 ]
Zhang, Tiegiang [1 ]
机构：
[1] Jilin Univ, Coll Phys, Changchun 130012, Jilin, Peoples R China
[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China
[3] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Rare Earth Resource Utilizat, Changchun 130022, Jilin, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2017年 / 422卷
基金：
中国国家自然科学基金;
关键词：
Electroluminescence; Indium tin oxide (ITO) anode; Plasma treatment; Interface modification; ELECTROLUMINESCENT DEVICES; EFFICIENCY; PERFORMANCE; IMPROVEMENT; OLEDS;
D O I：
10.1016/j.apsusc.2017.05.265
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work, we performed the investigation on surface modification of indium tin oxide (ITO) anode by depositing MoO3 interface layer and treating with low pressure plasma. Experimental results revealed both low pressure oxygen plasma treatment and MoO3 interface layer are efficient in facilitating the injection of holes, while both modifications increase the ITO surface roughness. Interestingly, the electroluminescent (EL) device with 3 nm MoO3 layer displayed the highest EL performances, which were even higher than those of the device with both modifications. By optimizing the selection of gas, treatment time, and applied electric field intensity of low pressure plasma treatment, the combination of 3 nm MoO3 layer and 2 min low pressure nitrogen plasma treatment at 4000 V m(-1) was demonstrated to be most efficient in depressing the unexpected leakage current without sacrificing the injection rate of holes. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：207 / 215
页数：9
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