Reduction of contact resistivity between Al alloy layer and indium tin oxide layer by fluorine plasma treatment

被引：6
|
作者：
Lee, HN [1 ]
Park, JC [1 ]
Lee, WG [1 ]
机构：
[1] HYDIS, LCD R&D Ctr, Array Proc Technol Grp, Ichon 467701, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 4A期
关键词：
contact; resistivity; fluorine; plasma; aluminum; indium tin oxide;
D O I：
10.1143/JJAP.41.L412
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of fluorine plasma treatment on an aluminum and neodymium alloy (Al-Nd) layer has been studied. The fluorine plasma replaces Al-O bonds with Al-F bonds on the surface of Al-Nd. The layer of Al-F bonds is preserved even if an indium tin oxide (ITO) layer is deposited on it. This layer prohibits the interfacial reaction from producing an AlOx layer between ITO and Al-Nd. The contact resistivity between ITO and Al-Nd is reduced to about 100 muOmega(.)cm(2) by this fluorine plasma treatment.
引用
收藏
页码：L412 / L414
页数：3
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