Fabrication and simulation of nanopore optoelectronic devices

被引：0

作者：

Coleman, J. J. ^{[1
]}

Dias, N. L. ^{[1
]}

Reddy, U. ^{[1
]}

Garg, A. ^{[1
]}

Young, J. D. ^{[1
]}

Verma, V. B. ^{[1
]}

Elarde, V. C. ^{[1
]}

机构：

[1] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

来源：

LASER OPTICS 2010 | 2010年 / 7822卷

关键词：

semiconductor lasers; nanostructures; QUANTUM; DIODE; LASER;

D O I：

10.1117/12.888346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanopores are a new class of low dimensional semiconductor nanostructures which have been recently proposed for use in lasers and other photonic applications. This paper provides an overview of patterned nanopore lattices with an emphasis on their electronic and optical properties. The ability to control nanopore properties by geometry and material composition are demonstrated. Two methods for controlled nanopore fabrication are presented and compared. Spectral characteristics of nanopore lasers are presented. Finite element numerical simulations are also performed to determine the band structure and emission properties of nanopores.

引用

页数：7

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