Thermal Stability of Hydrogen-Doped Zinc-Oxide Thin-Films

被引：6
|
作者：
Yeh, Chi-Li [1 ]
Tseng, Shao-Ze [1 ]
Lin, Wei-Ting [1 ]
Kuo, Chien-Cheng [2 ]
Chen, Sheng-Hui [1 ]
机构：
[1] Natl Cent Univ, Dept Opt & Photon, Chungli 32054, Taiwan
[2] Natl Cent Univ, Grad Inst Energy Engn, Chungli 32054, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 01期
关键词：
II-VI semiconductors - Metallic films - Thermodynamic stability - Oxide films - Thin films - Magnetron sputtering;
D O I：
10.1149/2.022201esl
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We investigated the thermal stability of ZnO:H films deposited by radio frequency magnetron sputtering at room temperature. The lowest resistivity obtained for a ZnO:H film was 1.99 x 10(-3) Omega-cm with a 10% H-2/Ar flow ratio. The increase in the H-2/Ar flow ratio during deposition plays an important role in producing better thermal stability ZnO:H films as the result of the increase in the percentage of substitutional Ho in the ZnO:H films. The resistivity of the ZnO:H film with 50% H-2/Ar flow ratio can be reduced from 3.49 x 10(-3) Omega-cm to 2.35 x 10(-3) Omega-cm after heat treatment to 300 degrees C. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.022201esl] All rights reserved.
引用
收藏
页码：H14 / H16
页数：3
相关论文
共 50 条
  • [41] CHARACTERIZATION OF PIEZOELECTRIC PROPERTIES OF ZINC-OXIDE THIN-FILMS DEPOSITED ON SILICON FOR SENSORS APPLICATIONS
    DESCHANVRES, JL
    REY, P
    DELABOUGLISE, G
    LABEAU, M
    JOUBERT, JC
    PEUZIN, JC
    SENSORS AND ACTUATORS A-PHYSICAL, 1992, 33 (1-2) : 43 - 45
  • [42] Thermal Stability of Hydrogen Annealed Aluminum Doped Zinc Oxide Films Investigated by Thermal Desorption Spectroscopy
    Chang, Shang-Chou
    Hung, Shang-Chao
    Lin, Tien-Chai
    Yu, Tseng-An
    Gian, Tsi-Yi
    Li, To-Sing
    2013 8TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT), 2013, : 279 - 282
  • [43] 1.54 μm emission dynamics of erbium-doped zinc-oxide thin films
    Komuro, S
    Katsumata, T
    Morikawa, T
    Zhao, X
    Isshiki, H
    Aoyagi, Y
    APPLIED PHYSICS LETTERS, 2000, 76 (26) : 3935 - 3937
  • [44] Influence of oxygen on the electrical properties of aluminum-doped zinc-oxide thin films
    Kim, Se-Hyun
    Moon, Yeon-Keon
    Moon, Dae-Yong
    Hong, Min-Soo
    Jeon, You-Jin
    Park, Jong-Wan
    Jeong, Chang-Ho
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (03) : 1256 - 1259
  • [45] TEXTURED ALUMINUM-DOPED ZINC-OXIDE THIN-FILMS FROM ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR DEPOSITION
    HU, JH
    GORDON, RG
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) : 880 - 890
  • [46] EPITAXIAL ALUMINUM-DOPED ZINC-OXIDE THIN-FILMS ON SAPPHIRE .2. DEFECT EQUILIBRIA AND ELECTRICAL-PROPERTIES
    SRIKANT, V
    SERGO, V
    CLARKE, DR
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (07) : 1935 - 1939
  • [47] ZINC-OXIDE THIN-FILMS PREPARED BY THE ELECTRON-CYCLOTRON-RESONANCE PLASMA SPUTTERING METHOD
    MANABE, Y
    MITSUYU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (02): : 334 - 339
  • [48] Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films
    Okada, Koichi
    Kohiki, Shigemi
    Luo, Suning
    Sekiba, Daiichiro
    Ishii, Satoshi
    Mitome, Masanori
    Kohno, Atsushi
    Tajiri, Takayuki
    Shoji, Fumiya
    THIN SOLID FILMS, 2011, 519 (11) : 3557 - 3561
  • [49] CONDUCTION MECHANISM OF HIGHLY CONDUCTIVE AND TRANSPARENT ZINC-OXIDE THIN-FILMS PREPARED BY MAGNETRON SPUTTERING
    MINAMI, T
    SATO, H
    OHASHI, K
    TOMOFUJI, T
    TAKATA, S
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 370 - 374
  • [50] PHOTO-ASSISTED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZINC-OXIDE THIN-FILMS
    MARUYAMA, T
    NAKAI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (03): : L346 - L348
12345