Thermal Stability of Hydrogen-Doped Zinc-Oxide Thin-Films

被引：6
|
作者：
Yeh, Chi-Li [1 ]
Tseng, Shao-Ze [1 ]
Lin, Wei-Ting [1 ]
Kuo, Chien-Cheng [2 ]
Chen, Sheng-Hui [1 ]
机构：
[1] Natl Cent Univ, Dept Opt & Photon, Chungli 32054, Taiwan
[2] Natl Cent Univ, Grad Inst Energy Engn, Chungli 32054, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 01期
关键词：
II-VI semiconductors - Metallic films - Thermodynamic stability - Oxide films - Thin films - Magnetron sputtering;
D O I：
10.1149/2.022201esl
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We investigated the thermal stability of ZnO:H films deposited by radio frequency magnetron sputtering at room temperature. The lowest resistivity obtained for a ZnO:H film was 1.99 x 10(-3) Omega-cm with a 10% H-2/Ar flow ratio. The increase in the H-2/Ar flow ratio during deposition plays an important role in producing better thermal stability ZnO:H films as the result of the increase in the percentage of substitutional Ho in the ZnO:H films. The resistivity of the ZnO:H film with 50% H-2/Ar flow ratio can be reduced from 3.49 x 10(-3) Omega-cm to 2.35 x 10(-3) Omega-cm after heat treatment to 300 degrees C. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.022201esl] All rights reserved.
引用
收藏
页码：H14 / H16
页数：3
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