Black Phosphorus Optoelectronic Devices

被引:0
|
作者
Chen, Xiaolong [1 ]
Xia, Fengnian [1 ]
机构
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
关键词
two-dimensional material; Black phosphorus; anisotropic properties; radio-frequency transistor; photodetector; bandgap tuning; large-area synthesis; FIELD-EFFECT TRANSISTORS; ELECTRIC-FIELD; GAS; PHOTODETECTOR; PASSIVATION; MOBILITY; FILMS; MOS2;
D O I
10.1117/12.2263244
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Black phosphorus recently emerged as a promising two-dimensional material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. It serendipitously bridges the zero-gap graphene and the relatively large-bandgap transition metal dichalcogenides such as molybdenum disulfide (MoS2). In this brief review manuscript, we will first cover the basic properties of few-layer and thin-film black phosphorus. Then we will present a few potential applications of black phosphorus such as radiofrequency transistors and wideband photodetectors. Finally we will discuss the recent observation of efficient bandgap tuning in black phosphorus thin films in a dual-gate transistor, and conclude with the discussion of synthesis of large area and high quality black phosphorus thin films.
引用
收藏
页数:8
相关论文
共 50 条
  • [21] Black phosphorus junctions and their electrical and optoelectronic applications附视频
    Ningqin Deng
    He Tian
    Jian Zhang
    Jinming Jian
    Fan Wu
    Yang Shen
    Yi Yang
    TianLing Ren
    Journal of Semiconductors, 2021, (08) : 23 - 35
  • [22] Optoelectronic Properties and Photodetection of Two-dimensional Black Phosphorus
    Li L.
    Cong C.
    Faguang Xuebao/Chinese Journal of Luminescence, 2023, 44 (06): : 995 - 1005
  • [23] Black-phosphorus-based junctions and their optoelectronic device applications
    Wang, Kunchan
    He, Zhuoyang
    Li, Xinyue
    Xu, Ke
    Zhou, Qingping
    Ye, Xiaowo
    Zhang, Teng
    Jiang, Shenghao
    Zhang, Yanming
    Hu, Bei
    Chen, Changxin
    NANO RESEARCH, 2023, 16 (01) : 1651 - 1669
  • [24] Black phosphorus frequency mixer for infrared optoelectronic signal processing
    Suess, Ryan J.
    Hart, Joseph D.
    Leong, Edward
    Mittendorff, Martin
    Murphy, Thomas E.
    APL PHOTONICS, 2019, 4 (03)
  • [25] Black-phosphorus-based junctions and their optoelectronic device applications
    Kunchan Wang
    Zhuoyang He
    Xinyue Li
    Ke Xu
    Qingping Zhou
    Xiaowo Ye
    Teng Zhang
    Shenghao Jiang
    Yanming Zhang
    Bei Hu
    Changxin Chen
    Nano Research, 2023, 16 : 1651 - 1669
  • [26] Energy Dissipation in Black Phosphorus Heterostructured Devices
    Ali, Fida
    Ahmed, Faisal
    Yang, Zheng
    Moon, Inyong
    Lee, Myeongjin
    Hassan, Yasir
    Lee, Changgu
    Yoo, Won Jong
    ADVANCED MATERIALS INTERFACES, 2019, 6 (02):
  • [27] Interface and surface engineering of black phosphorus: a review for optoelectronic and photonic applications
    Mu, Haoran
    Yu, Wenzhi
    Yuan, Jian
    Lin, Shenghuang
    Zhang, Guangyu
    MATERIALS FUTURES, 2022, 1 (01):
  • [28] Programmable black phosphorus image sensor for broadband optoelectronic edge computing
    Seokhyeong Lee
    Ruoming Peng
    Changming Wu
    Mo Li
    Nature Communications, 13
  • [29] Programmable black phosphorus image sensor for broadband optoelectronic edge computing
    Lee, Seokhyeong
    Peng, Ruoming
    Wu, Changming
    Li, Mo
    NATURE COMMUNICATIONS, 2022, 13 (01)
  • [30] Multifunctional Homogeneous Lateral Black Phosphorus Junction Devices
    Jia, Jingyuan
    Xu, Jiao
    Park, Jin-Hong
    Lee, Byoung Hun
    Hwang, Euyheon
    Lee, Sungjoo
    CHEMISTRY OF MATERIALS, 2017, 29 (07) : 3143 - 3151