Rational design strategies for electron-deficient semiconducting polymers in ambipolar/n-channel organic transistors and all-polymer solar cells

被引:51
|
作者
Wang, Yang [1 ]
Michinobu, Tsuyoshi [1 ]
机构
[1] Tokyo Inst Technol, Dept Mat Sci & Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; PERFORMANCE N-TYPE; DONOR-ACCEPTOR POLYMERS; DIRECT ARYLATION POLYCONDENSATION; POWER CONVERSION EFFICIENCY; CHARGE-TRANSPORT PROPERTIES; TERMINATED SIDE-CHAINS; CONJUGATED POLYMERS; NAPHTHALENE DIIMIDE;
D O I
10.1039/c8tc03967d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The past two decades have witnessed significant progress in the field of organic electronics, especially polymer thin-film transistors (PTFTs) and polymer solar cells (PSCs), which provide a promising opportunity for applications in flexible and wearable devices. Thanks to the efforts of the rapid development of p-type semiconducting polymeric materials and device optimization, an impressive hole mobility over 10 cm(2) V-1 s(-1) and power conversion efficiency near 15% have been achieved in PTFTs and PSCs, respectively. However, the development of electron deficient semiconducting polymers for ambipolar/n-type PTFTs and polymer donor-polymer acceptor type PSCs (all-PSCs) lags far behind. Therefore, the design and synthesis of new electron-deficient semiconducting polymers have attracted increasing attention during the past five years. This review attempts to critically summarize the recent molecular design strategies with respect to the electron-deficient semiconducting polymers. These polymers have demonstrated interesting electronic properties and promising performances as active layers in ambipolar/n-type PTFTs and all-PSCs. The molecular structural implications related to the ambipolar/n-type device performances of the PTFTs and all-PSCs are discussed.
引用
收藏
页码:10390 / 10410
页数:21
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