Investigation of deep levels in semi-insulating GaAs by means of a thermally activated piezoelectric photoacoustic measurements

被引：0
|
作者：
Ikari, T
Fukuyama, A
Akashi, Y
机构：
[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan
[2] Miyazaki Univ, Dept Mat Sci, Miyazaki 8892192, Japan
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期
关键词：
semi-insulating GaAs; temperature variation of the piezoelectric photoacoustic signal; deep levels; nonradiative recombination;
D O I：
10.1016/S1369-8001(00)00137-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature variation of the piezoelectric photoacoustic (PPA) signal intensity of semi-insulating (SI) GaAs from 20 to 150K was measured. Four peaks at 50, 70, 110 and 125K were observed in the PPA signal. From the theoretical analysis based on the rate equations of electrons in the conduction band and several deep levels, we concluded that the observed four peaks were due to the nonradiative electron recombinations via EL6, EL7, EL15 and an unknown deep level, respectively. Deep levels with extremely low concentrations (10(11)-10(15)cm(-3)) were clearly identified conveniently in SI-GaAs by using the PPA method for the first time. (C) 2001 Elsevier Science Ltd. AII rights reserved.
引用
收藏
页码：253 / 255
页数：3
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