Influence of a ZnO Buffer Layer on the Structural, Optical, and Electrical Properties of ITO/ZnO Bi-Layered Films

被引：0

作者：

Heo, Sung -Bo ^{[1
,2
]}

Moon, Hyun-Joo ^{[1
]}

Kim, Jun-Ho ^{[2
]}

Kim, Daeil ^{[1
]}

机构：

[1] Univ Ulsan, Sch Mat Sci & Engn, Ulsan 44610, South Korea

[2] Korea Inst Ind Technol KITECH, Yangsan 31056, South Korea

来源：

KOREAN JOURNAL OF METALS AND MATERIALS | 2016年 / 54卷 / 05期

关键词：

optoelectronic materials; optical properties; x-ray diffraction; sputtering; AFM; INDIUM-TIN-OXIDE; THIN-FILMS; GZO FILMS; ITO; TEMPERATURE;

D O I：

10.3365/KJMM.2016.54.5.352

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sn-doped indium oxide (ITO) films and ITO/ZnO bi-layered films were prepared on polycarbonate substrates by RF magnetron sputtering without intentional substrate heating. In order to consider the influence of the ZnO thickness on the structural, optical, and electrical properties of ITO/ZnO films, the thickness of the ZnO buffer layer was varied from 5 to 20 nm. As-deposited ITO films show an average optical transmittance of 79.2% in the visible range and an electrical resistivity of 3.0x10(-4) Omega cm, while films with a 5-nm thick ZnO buffer layer film show an electrical resistivity of 2.6x10(-4) Omega cm and films with a 20-nm thick ZnO buffer layer show an optical transmittance of 82.0%. Based on the figure of merit, it is concluded that the ZnO buffer layer enhances the optical and electrical performance of ITO films used as transparent conducting oxides in flexible display applications.

引用

页码：352 / 357

页数：6

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