Wall shear stress and pressure sensors development for active control of flow

被引：0

作者：

Tsamados, DM ^{[1
]}

Meunier, D ^{[1
]}

Laghrouche, M ^{[1
]}

Boussey, J ^{[1
]}

Tardu, S ^{[1
]}

机构：

[1] Inst Microelect Electromagnetisme & Photon, F-38016 Grenoble 1, France

来源：

MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY IX | 2004年 / 5342卷

关键词：

MEMS; SOI; pressure sensors; wall shear stress sensors;

D O I：

10.1117/12.524533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a technology for wall shear stress and pressure integrated sensor fabrication. Thanks to the use of SOI wafers and wafer bonding technique.. we came up with an innovative technology that provides high on-chip density of sensors required for arrays utilized in numerous microfluidic applications like active control of flow. At the end some wall shear stress results are presented.

引用

页码：250 / 259

页数：10

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