First-principles study of GaSb(001) surface reconstructions

被引：0
|
作者：
Righi, MC [1 ]
Magri, R [1 ]
Bertoni, CM [1 ]
机构：
[1] Univ Modena & Reggio Emilia, INFM, Natl Res Ctr NanoStruct & BioSyst Surfaces, Dipartimento Fis, I-41100 Modena, Italy
来源：
Physics of Semiconductors, Pts A and B | 2005年 / 772卷
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Different models for the GaSb-(001) surface reconstruction have been proposed on the basis of experimental observations in typical GaSb growth conditions (V/III flux ratio > 1). We have analyzed their relative stability by means of first-principles pseudopotential plane-wave calculations. We constructed the surface phase diagram as a function of the chemical potential of the elemental constituents to mimic different growth conditions.
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页码：375 / 376
页数：2
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