Oxygen-Controlled Seed Layer in DC Sputter-Deposited ZnO:Al Substrate for Si Thin-Film Solar Cells

被引：7

作者：

Lee, Seung-Yoon ^{[1
,2
]}

Hwang, Taehyun ^{[1
]}

Lee, Woojin ^{[1
]}

Lee, Sangheon ^{[1
]}

Choi, Hongsik ^{[1
]}

Ahn, Seh-Won ^{[2
]}

Lee, Heon-Min ^{[2
]}

Park, Byungwoo ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] LG Elect Adv Res Inst, Seoul 137724, South Korea

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

a-Si-based thin-film solar cells; Al-doped ZnO; sputtering; transparent conducting oxide; ZINC-OXIDE; TRANSPORT;

D O I：

10.1109/JPHOTOV.2014.2376052

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Oxygen-controlled seed layer in Al-doped ZnO (ZnO:Al) thin films deposited by the industrially compatible dynamic dc magnetron sputter results in both enhanced electron mobilities and appropriate etched morphologies for the Si thin-film solar cells. At the relatively low deposition temperature of 300 degrees C, optimized ZnO: Al film grown on the seed layer has the carrier mobility of 45 cm(2)/V.s and proper postetching morphology with around 1-2-mu m crater size. Reduced angular distribution of the (002) grains analyzed by the diffraction rocking curve is shown as the key structural feature for the improved carrier mobility. Finally, the performance of the microcrystalline Si solar cell on the developed ZnO: Al substrate shows high-efficiency potential of the tandem solar cell adapting this transparent conductive oxide substrate.

引用

页码：473 / 478

页数：6

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