SWITCHING LOSSES ANALYSIS IN SIC POWER MOSFET

被引：0
|
作者：
Lirio, L. E. A. [1 ]
Bellar, M. D. [2 ]
Neto, J. A. M. [3 ]
dos Reis, M. S. [3 ]
Aredes, M. [4 ]
机构：
[1] DSAM Brazilian Navy, Rio De Janeiro, RJ, Brazil
[2] PEL DETEL State Univ Rio de Janeiro, Rio De Janeiro, RJ, Brazil
[3] CEELE CEFET RJ Fed Ctr Tech Educ Rio de Janeiro, Rio De Janeiro, RJ, Brazil
[4] PEE COPPE Fed Univ Rio de Janeiro, Rio De Janeiro, RJ, Brazil
来源：
2015 IEEE 13TH BRAZILIAN POWER ELECTRONICS CONFERENCE AND 1ST SOUTHERN POWER ELECTRONICS CONFERENCE (COBEP/SPEC) | 2015年
关键词：
SiC MOSFET; Switching Power Losses;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper methodologies for analysis of power switching losses in SiC MOSFETs are evaluated by means of PSpice simulations. Besides, an optimized piecewise linear method to calculate those losses is proposed. Results and discussions are presented as an aid for assessing the performance of power electronics converters based on SiC MOSFETs.
引用
收藏
页数：6
相关论文
共 50 条
  • [31] Comparison of switching behaviour and losses of high-power Si and SiC power module
    Reiff, David
    Staudt, Volker
    Feng, Jinghua
    Shang, Jing
    2020 INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS, ELECTRICAL DRIVES, AUTOMATION AND MOTION (SPEEDAM 2020), 2020, : 402 - 407
  • [32] Power MOSFET Switching Loss Analysis: A New Insight
    Shen, Z. John
    Xiong, Yali
    Cheng, Xu
    Fu, Yue
    Kumar, Pavan
    CONFERENCE RECORD OF THE 2006 IEEE INDUSTRY APPLICATIONS CONFERENCE, FORTY-FIRST IAS ANNUAL MEETING, VOL 1-5, 2006, : 1438 - 1442
  • [33] Analysis of Stray Inductance's Influence on SiC MOSFET Switching Performance
    Wang, Zhaohui
    Zhang, Junming
    Wu, Xinke
    Sheng, Kuang
    2014 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2014, : 2838 - 2843
  • [34] Turn on Switching Transient Analysis of SiC MOSFET and Schottky Diode Pair
    Roy, Shamibrota Kishore
    Basu, Kaushik
    2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 698 - 704
  • [35] An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation
    Cherif, O. Mohammed
    Nadji, B.
    Tadjer, S. A.
    Bencherif, H.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (05) : 3116 - 3122
  • [36] Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity
    Pittini, Riccardo
    Zhang, Zhe
    Andersen, Michael A. E.
    2013 IEEE ECCE ASIA DOWNUNDER (ECCE ASIA), 2013, : 233 - 239
  • [37] Comparing the Switching Performance of SiC MOSFET Intrinsic Body Diode to Additional SiC Schottky Diodes in SiC Power Modules
    Martin, Daniel
    Killeen, Peter
    Curbow, W. Austin
    Sparkman, Brett
    Kegley, Lauren E.
    McNutt, Ty
    2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2016, : 242 - 246
  • [38] Impact of blanking time on switching losses in a SiC MOSFET-based converter using capacitive snubbers
    Sadik, Diane-Perle
    Ranstad, Per
    Nee, Hans-Peter
    2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE), 2019,
  • [39] Method for the analysis of power MOSFET losses in a synchronous buck converter
    Lopez, Toni
    Elferich, Reinhold
    2006 12TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-4, 2006, : 48 - +
  • [40] The analysis of power losses of power inverter based on SiC MOSFETs
    Song, Qiang
    Wang, Wei
    Zhang, Shuo
    Li, Yiting
    Ahmad, Mukhtiar
    2019 IEEE 1ST GLOBAL POWER, ENERGY AND COMMUNICATION CONFERENCE (GPECOM2019), 2019, : 152 - 157
12345