X-band epi-BAW resonators

被引：9

作者：

Zhao, Wenwen ^{[1
]}

Asadi, Mohammad Javad ^{[2
]}

Li, Lei ^{[2
]}

Chaudhuri, Reet ^{[2
]}

Nomoto, Kazuki ^{[2
]}

Xing, Huili Grace ^{[2
,3
,4
]}

Hwang, James C. M. ^{[2
,3
]}

Jena, Debdeep ^{[2
,3
,4
]}

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, haca, Ithaca, NY 14853 USA

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[3] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[4] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2022年 / 132卷 / 02期

关键词：

36;

D O I：

10.1063/5.0097458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using epitaxial aluminum nitride (AlN) developed for ultraviolet photonics and high-speed electronics, we demonstrate suspended AlN<br />thin-film bulk acoustic resonators (FBARs) at 9.2 GHz in the X-band (8-12 GHz) of the microwave spectrum. The resonators show a<br />Q(max)asymptotic to 614 and a figure of merit f.Q asymptotic to 5.6 THz. The material stack of these epi-AlN FBARs allows monolithic integration with AlN/GaN/AlN quantum well high-electron-mobility-transistors to a unique RF front end and also enable integration with epitaxial nitride superconductors for microwave filters for quantum computing.<br />Published under an exclusive license by AIP Publishing.

引用

页数：8

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