Nonlinear absorption edge properties of 1.3-μm GaInNAs saturable absorbers -: art. no. 132103

被引：16

作者：

Grange, R ^{[1
]}

Rutz, A ^{[1
]}

Liverini, V ^{[1
]}

Haiml, M ^{[1
]}

Schön, S ^{[1
]}

Keller, U ^{[1
]}

机构：

[1] ETH, Dept Phys, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 13期

关键词：

D O I：

10.1063/1.2058216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaInNAs 1.3-mu m quantum-well saturable absorber mirrors are characterized with spectrally resolved nonlinear reflectivity measurements over 70 nm around the broadened band edge. All important parameters such as saturation fluence F-sat, modulation depth Delta R, and nonsaturable loss Delta R-ns are obtained relative to the photoluminescence (PL) peak. F-sat has a minimum of 4 mu J/cm(2) 10 nm above the PL peak and Delta R scales with the linear absorption even in the bandtail. The product Delta R center dot F-sat important to suppress Q-switching instabilities in mode-locked lasers decreases linearly with wavelength and reaches a minimum 20 nm above the PL peak. We observed wavelength-independent nonsaturable losses of only about 10% of the maximum linear absorption. These results increase the understanding of optical and electronic properties of GaInNAs around the band edge. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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