Nonlinear absorption edge properties of 1.3-μm GaInNAs saturable absorbers -: art. no. 132103

被引:16
|
作者
Grange, R [1 ]
Rutz, A [1 ]
Liverini, V [1 ]
Haiml, M [1 ]
Schön, S [1 ]
Keller, U [1 ]
机构
[1] ETH, Dept Phys, Inst Quantum Elect, CH-8093 Zurich, Switzerland
关键词
D O I
10.1063/1.2058216
中图分类号
O59 [应用物理学];
学科分类号
摘要
GaInNAs 1.3-mu m quantum-well saturable absorber mirrors are characterized with spectrally resolved nonlinear reflectivity measurements over 70 nm around the broadened band edge. All important parameters such as saturation fluence F-sat, modulation depth Delta R, and nonsaturable loss Delta R-ns are obtained relative to the photoluminescence (PL) peak. F-sat has a minimum of 4 mu J/cm(2) 10 nm above the PL peak and Delta R scales with the linear absorption even in the bandtail. The product Delta R center dot F-sat important to suppress Q-switching instabilities in mode-locked lasers decreases linearly with wavelength and reaches a minimum 20 nm above the PL peak. We observed wavelength-independent nonsaturable losses of only about 10% of the maximum linear absorption. These results increase the understanding of optical and electronic properties of GaInNAs around the band edge. (C) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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