Picosecond high-voltage drift diodes based on gallium arsenide

被引：4
|
作者：
Rozhkov, AV [1 ]
Kozlov, VA [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 12期
关键词：
Gallium; Magnetic Material; Recovery Rate; Electromagnetism; Epitaxial Layer;
D O I：
10.1134/1.1634666
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Experimental results of studying the dynamics of recovery of diodes based on lightly doped epitaxial layers of gallium arsenide are reported. The diodes under consideration belong to the class of drift diodes with step recovery and are designed to operate in circuits for shaping and generating picosecond pulses. The obtained values of the reverse-voltage recovery rate (dU/dt approximate to 2000 V/ns) far exceed the published ultimate recovery rates for picosecond-response diodes with charge accumulation and are unprecedentedly high for step-recovery drift diodes. (C) 2003 MAIK "Nauka / Interperiodica".
引用
收藏
页码：1425 / 1427
页数：3
相关论文
共 50 条
  • [1] Picosecond high-voltage drift diodes based on gallium arsenide
    A. V. Rozhkov
    V. A. Kozlov
    [J]. Semiconductors, 2003, 37 : 1425 - 1427
  • [2] FORMATION OF HIGH-VOLTAGE DIFFERENTIAL PRESSURE OF PICOSECOND RANGE ON ARSENIDE-GALLIUM DIODES
    ALFEROV, ZI
    GREKHOV, IV
    EFANOV, VM
    KARDOSYSOEV, AF
    KOROLKOV, VI
    STEPANOVA, MN
    [J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (18): : 1089 - 1093
  • [3] High-Voltage Gallium Arsenide Step Recovery Diodes.
    Rozhkov, AV
    Korolkov, VI
    [J]. SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1340 - 1343
  • [4] A High-Voltage High-Frequency Subnanosecond Pulse Generator Based on Gallium Arsenide Drift Step-Recovery Diodes
    A. V. Rozhkov
    [J]. Instruments and Experimental Techniques, 2021, 64 : 680 - 682
  • [5] A High-Voltage High-Frequency Subnanosecond Pulse Generator Based on Gallium Arsenide Drift Step-Recovery Diodes
    Rozhkov, A., V
    [J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2021, 64 (05) : 680 - 682
  • [6] HIGH-VOLTAGE ARSENIDE-GALLIUM FORCE DIODES OF LARGE SQUARE
    ARDZHANOV, AS
    VAINSHTEIN, SN
    ZHILYAEV, YV
    ZAKS, MV
    KUZNETSOV, NI
    SLUTSKII, AB
    STOYANOVSKII, VY
    CHELNOKOV, VE
    [J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1988, 14 (13): : 1153 - 1156
  • [7] NICKEL GALLIUM-ARSENIDE HIGH-VOLTAGE POWER SCHOTTKY DIODES
    ASHKINAZI, G
    HADAS, T
    MEYLER, B
    NATHAN, M
    ZOLOTAREVSKI, L
    ZOLOTAREVSKI, O
    [J]. SOLID-STATE ELECTRONICS, 1993, 36 (01) : 13 - 18
  • [8] Erratum to: A High-Voltage High-Frequency Subnanosecond Pulse Generator Based on Gallium Arsenide Drift Step-Recovery Diodes
    A. V. Rozhkov
    [J]. Instruments and Experimental Techniques, 2021, 64 : 921 - 921
  • [9] HIGH VOLTAGE EPITAXIAL GALLIUM ARSENIDE MICROWAVE DIODES
    KRESSEL, H
    GOLDSMITH, N
    [J]. RCA REVIEW, 1963, 24 (02): : 182 - 198
  • [10] HIGH-VOLTAGE SUBNANOSECOND AVALANCHE SHARPENING DIODES: A COMPARATIVE STUDY OF SILICON AND GALLIUM ARSENIDE STRUCTURES
    Brylevskiy, V.
    Smirnova, I.
    Rozhkov, A.
    Brunkov, P.
    Rodin, P.
    Grekhov, I.
    [J]. 2015 IEEE PULSED POWER CONFERENCE (PPC), 2015,
12345