A High-Voltage High-Frequency Subnanosecond Pulse Generator Based on Gallium Arsenide Drift Step-Recovery Diodes

被引:0
|
作者
Rozhkov, A., V [1 ]
机构
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1134/S0020441221040230
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The prospect of using high-voltage GaAs drift step-recovery diodes for the formation of subnanosecond pulses is shown. The electrical circuit of a generator is described, which provides (with a total efficiency of at least 25%) the formation of pulses at a load of 50 omega with an amplitude of up to 550 V, a voltage rise time of 0.43 ns, a full width at half maximum of 0.73 ns, and a repetition frequency of up to 200 kHz.
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页码:680 / 682
页数:3
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