Spin-filter spin-valve films with an ultrathin CoFe free layer

被引：6
|
作者：
Fukuzawa, H [1 ]
Iwasaki, H [1 ]
Kamiguchi, Y [1 ]
Koi, K [1 ]
Sahashi, M [1 ]
机构：
[1] Toshiba Corp, Ctr Corp Res & Dev, Kawasaki, Kanagawa 2128582, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 10期
关键词：
D O I：
10.1063/1.1359169
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The concept of spin-filter spin-valve (SFSV) films is reviewed. The dependence of the free layer structure on the spin-filter effect was investigated by using model films and two types of free layers were compared, a single CoFe layer and a conventional NiFe/Co free layer. At the same magnetic thickness of the free layer, the SFSV films with a CoFe free layer showed a larger magnetoresistance (MR) ratio than those with a NiFe/Co free layer. This is partly attributed to the thinner CoFe free layer thickness, which is due to the fact that the CoFe free layer has higher B-s than the NiFe/Co free layer. Moreover, SFSV films with a CoFe free layer still showed a larger MR ratio when the free layer thickness was the same. It suggests that other factors contribute to the high MR performance, such as the quality of the interface between a free layer and a high conductance layer. Film performance of MR 9% to 10%, DeltaR(s) 1.5-2.0 Omega, H(c)(ea)similar to3 Oe, and lambda (s)less than or equal to +/-0.5 ppm was obtained with a single CoFe free layer and synthetic antiferromagnetic pinned structure. (C) 2001 American Institute of Physics.
引用
收藏
页码：5581 / 5584
页数：4
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