Detection and measurement of hot carrier degradation associated with asymmetric p-channel transistors

被引：0
|
作者：
Aldridge, B [1 ]
Sharif, N [1 ]
Yum, E [1 ]
Serhan, F [1 ]
机构：
[1] MOTOROLA INC,IRVINE,CA 92718
来源：
1995 INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, FINAL REPORT | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：66 / 71
页数：6
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