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Simultaneous growth of diamond and nanostructured graphite thin films by hot-filament chemical vapor deposition
被引:8
|作者:
Ali, M.
[1
]
Urgen, M.
[2
]
机构:
[1] COMSATS Inst Informat Technol CIIT, Dept Phys, Islamabad, Pakistan
[2] Istanbul Tech Univ, Dept Met & Mat Engn, TR-34469 Istanbul, Turkey
关键词:
Thin films;
Crystal structure;
Graphite;
Morphology;
METHANE CONCENTRATION;
CARBON NANOTUBES;
PRESSURE;
EMISSION;
D O I:
10.1016/j.solidstatesciences.2011.11.012
中图分类号:
O61 [无机化学];
学科分类号:
070301 ;
081704 ;
摘要:
Diamond and graphite films on silicon wafer were simultaneously synthesized at 850 degrees C without any additional catalyst. The synthesis was achieved in hot-filament chemical vapor deposition reactor by changing distance among filaments in traditional gas mixture. The inter-wire distance for diamond and graphite deposition was kept 5 and 15 mm, whereas kept constant from the substrate. The Raman spectroscopic analyses show that film deposited at 5 mm is good quality diamond and at 15 mm is nanostructured graphite and respective growths confirm by scanning auger electron microscopy. The scanning electron microscope results exhibit that black soot graphite is composed of needle-like nanostructures, whereas diamond with pyramidal featured structure. Transformation of diamond into graphite mainly attributes lacking in atomic hydrogen. The present study develops new trend in the field of carbon based coatings, where single substrate incorporate dual application can be utilized. (C) 2011 Elsevier Masson SAS. All rights reserved.
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页码:150 / 154
页数:5
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