Comparison of photoemission characteristics between square and circular wire array GaAs photocathodes

被引:3
|
作者
Deng, Wenjuan [1 ,2 ]
Peng, Xincun [2 ]
Zou, Jijun [2 ]
Wang, Weilu [2 ]
Liu, Yun [2 ]
Zhang, Tao [2 ]
Zhang, Yijun [3 ]
Zhang, Daoli [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China
[2] East China Univ Technol, Engn Res Ctr New Energy Technol Jiangxi Prov, Nanchang 330013, Jiangxi, Peoples R China
[3] Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Nanjing 210094, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
POLARIZATION; ABSORPTION; SIMULATION; NANOWIRES; SURFACES; GROWTH; CS;
D O I
10.1364/AO.56.008991
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Two types of negative electron affinity gallium arsenide (GaAs) wire array photocathodes were fabricated by reactive ion etching and inductively coupled plasma etching of bulk GaAs material. High density GaAs wire arrays with high periodicity and good morphology were verified using scanning electron microscopy, and photoluminescence spectra confirmed the wire arrays had good crystalline quality. Reflection spectra showed that circular GaAs wire arrays had superior light trapping compared with square ones. However, after Cs/O activation, the square GaAs wire array photocathodes showed enhanced spectral response. The integral sensitivity of the square wire array photocathodes was approximately 2.8 times that of the circular arrays. (C) 2017 Optical Society of America
引用
收藏
页码:8991 / 8995
页数:5
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