SiC Ceramic-Bonded Carbon Fabricated With Si3N4 and Carbon Powders

被引：11
|
作者：
Chen, Weiwu [1 ]
Tojo, Tetsuro [1 ,2 ]
Miyamoto, Yoshinari [1 ,2 ]
机构：
[1] Osaka Univ, Joining & Welding Res Inst, Ibaraki, Osaka 5670047, Japan
[2] Toyo Tanso Co Ltd, Adv Carbon Technol Ctr, Nishiyodogawa Ku, Osaka 5550011, Japan
来源：
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY | 2012年 / 9卷 / 02期
关键词：
THERMAL-CONDUCTIVITY;
D O I：
10.1111/j.1744-7402.2011.02677.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
New composites called ceramic-bonded carbon (CBCs), consisting of a three-dimensional structure of carbon particles bonded with thin ceramic boundaries, were developed. To fabricate light and tough CBCs and to understand their reinforcing mechanism, Si3N4 and carbon powders (25:75 in volume ratio) were gelcasted and then sintered by spark plasma sintering at temperatures of 17001900 degrees C. The ceramic boundary of SiC was formed in situ at above 1700 degrees C by the reaction of Si3N4 and C. The sintered CBCs showed a unique microstructure consisting of carbon particles and ceramic boundaries of 15 similar to mu m in size and 0.53 similar to mu m in thickness, respectively. With an increase in sintering temperature, physical bonding of ceramic grains to the carbon particles was enhanced as the grain growth of SiC increased. The SiC/CBCs sintered at 1900 degrees C were highly dense (97% theoretical density), lightweight (2.36 similar to mg/m3), and had both relatively high bending strength and thermal conductivity (135 similar to MPa and 140 similar to W/mK, respectively).
引用
收藏
页码：313 / 321
页数：9
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