Anisotropies of the lower and upper critical fields in MgB2 single crystals -: art. no. 057001

被引:90
|
作者
Lyard, L
Szabó, P
Klein, T
Marcus, J
Marcenat, C
Kim, KH
Kang, BW
Lee, HS
Lee, SI
机构
[1] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France
[2] Slovak Acad Sci, Inst Expt Phys, Ctr Low Temp Phys, Kosice 04353, Slovakia
[3] UPJS, FS, Kosice 04353, Slovakia
[4] Inst Univ France, F-38041 Grenoble 9, France
[5] Univ Grenoble 1, F-38041 Grenoble 9, France
[6] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, SPSMS, F-38054 Grenoble 9, France
[7] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[8] Pohang Univ Sci & Technol, NVCRICS, Pohang 790784, South Korea
关键词
D O I
10.1103/PhysRevLett.92.057001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The temperature dependence of the upper (H-c2) and lower (H-c1) critical fields has been deduced from Hall probe magnetization measurements of high quality MgB2 single crystals along the two main crystallographic directions. We show that Gamma(Hc2)=H-c2parallel toab/H-c2parallel toc and Gamma(Hc1)=H-c1parallel toc/H-c1parallel toab differ significantly at low temperature (being similar to5 and similar to1, respectively) and have opposite temperature dependencies. We suggest that MgB2 can be described by a single field dependent anisotropy parameter gamma(H) (=lambda(c)/lambda(ab)=xi(ab)/xi(c)) that increases from Gamma(Hc1) at low field to Gamma(Hc2) at high field.
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页数:4
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