Some chemistry of organoarsenic and -antimony compounds

被引：0
|
作者：
Jain, VK [1 ]
机构：
[1] Bhabha Atom Res Ctr, Novel Mat & Struct Chem Div, Trombay 400085, Mumbai, India
来源：
JOURNAL OF THE INDIAN CHEMICAL SOCIETY | 2001年 / 78卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The interest in organoarsenic and -antimony compounds is being renewed due to their wide ranging applications which include as precursors for chemical vapor deposition of Group III-V semiconductors, versatile ligands and reagents in organic synthesis. The present paper intends to discuss some salient features of the work carried out in author's laboratory on organoarsenic and -antimony compounds. In this paper reactions of RM(III), R2M(III), R3M(V) (M = As, Sb) species with xanthates and phosphorus based acids are described. Design and development of several tertiary arsines including heterocyclic derivatives as precursors and their reaction chemistry are discussed.
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页码：224 / 229
页数：6
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