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Memristor initial-boosted coexisting plane bifurcations and its extreme multi-stability reconstitution in two-memristor-based dynamical system
被引:105
|作者:
Bao, Han
[1
]
Chen, Mo
[1
]
Wu, HuaGan
[1
]
Bao, BoCheng
[1
]
机构:
[1] Changzhou Univ, Sch Informat Sci & Engn, Changzhou 213164, Jiangsu, Peoples R China
关键词:
memristor-based system;
memristor initial;
coexisting plane bifurcations;
extreme multi-stability;
ELECTROMAGNETIC INDUCTION;
ELECTRICAL-ACTIVITIES;
HIDDEN ATTRACTORS;
MULTISTABILITY;
NEURON;
CIRCUIT;
NETWORK;
FLUX;
D O I:
10.1007/s11431-019-1450-6
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Initial-dependent extreme multi-stability and offset-boosted coexisting attractors have been significantly concerned recently. This paper constructs a novel five-dimensional (5-D) two-memristor-based dynamical system by introducing two memristors with cosine memductance into a three-dimensional (3-D) linear autonomous dissipative system. Through theoretical analyses and numerical plots, the memristor initial-boosted coexisting plane bifurcations are found and the memristor initial-dependent extreme multi-stability is revealed in such a two-memristor-based dynamical system with plane equilibrium. Furthermore, a dimensionality reduction model with the determined equilibrium is established via an integral transformation method, upon which the memristor initial-dependent extreme multi-stability is reconstituted theoretically and expounded numerically Finally, physically circuit-implemented PSIM (power simulation) simulations are carried out to validate the plane offset-boosted coexisting behaviors.
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页码:603 / 613
页数:11
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