Memristor initial-boosted coexisting plane bifurcations and its extreme multi-stability reconstitution in two-memristor-based dynamical system

被引:105
|
作者
Bao, Han [1 ]
Chen, Mo [1 ]
Wu, HuaGan [1 ]
Bao, BoCheng [1 ]
机构
[1] Changzhou Univ, Sch Informat Sci & Engn, Changzhou 213164, Jiangsu, Peoples R China
关键词
memristor-based system; memristor initial; coexisting plane bifurcations; extreme multi-stability; ELECTROMAGNETIC INDUCTION; ELECTRICAL-ACTIVITIES; HIDDEN ATTRACTORS; MULTISTABILITY; NEURON; CIRCUIT; NETWORK; FLUX;
D O I
10.1007/s11431-019-1450-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Initial-dependent extreme multi-stability and offset-boosted coexisting attractors have been significantly concerned recently. This paper constructs a novel five-dimensional (5-D) two-memristor-based dynamical system by introducing two memristors with cosine memductance into a three-dimensional (3-D) linear autonomous dissipative system. Through theoretical analyses and numerical plots, the memristor initial-boosted coexisting plane bifurcations are found and the memristor initial-dependent extreme multi-stability is revealed in such a two-memristor-based dynamical system with plane equilibrium. Furthermore, a dimensionality reduction model with the determined equilibrium is established via an integral transformation method, upon which the memristor initial-dependent extreme multi-stability is reconstituted theoretically and expounded numerically Finally, physically circuit-implemented PSIM (power simulation) simulations are carried out to validate the plane offset-boosted coexisting behaviors.
引用
收藏
页码:603 / 613
页数:11
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    [J]. Science China Technological Sciences, 2020, 63 : 603 - 613
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