In-situ X-ray measurements of defect generation during PVT growth of SiC

被引：7
|
作者：
Konias, K. [1 ]
Hock, R. [1 ]
Stockmeier, M. [1 ]
Wellmann, P. J. [2 ]
Miller, M. [3 ]
Ossege, S. [3 ]
Magerl, A. [1 ]
机构：
[1] Univ Erlangen Nurnberg, Chair Crystallog & Struct Phys, Staudtstr 3, D-91058 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Dept Mat Sci, D-91058 Erlangen, Germany
[3] Univ Erlangen Nurnberg, Mech Workshop, D-91058 Erlangen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷
关键词：
crystal growth; high energy x-ray diffraction; in-situ measurements; crystal defects;
D O I：
10.4028/www.scientific.net/MSF.556-557.267
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A standard inductively heated PVT growth furnace modified for diffraction experiments with high energy x-rays in focussing Laue geometry was built. The growth furnace will be placed in front of a tungsten anode high energy x-ray source. The Laue diffraction pattern of the growing crystal can be detected on a CCD camera detector. Evolution of crystalline defects as a function of the growth process parameters will be infered from the diffraction experiments. The furnace design and results of first test measurements serving as proof of concept are reported.
引用
收藏
页码：267 / +
页数：2
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