Defect analysis of SiC sublimation growth by the in-situ X-ray topography

被引：0

作者：

Kato, T. ^{[1
]}

Oyanagi, N. ^{[2
]}

Yamaguchi, H. ^{[1
]}

Nishizawa, S. ^{[1
]}

Arai, K. ^{[1
]}

机构：

[1] Ultra-Low-Loss Pwr. Device T., Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

[2] Ultra-Low-Loss Pwr. Device T., R and D Assoc. Fut. Electron Devices, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

来源：

Materials Science Forum | 2001年 / 353-356卷

关键词：

Crystal growth - Density (specific gravity) - Dislocations (crystals) - Grain boundaries - Imaging techniques - Nucleation - Optical microscopy - Single crystals - Sublimation - Thermal effects - X ray analysis;

D O I：

10.4028/www.scientific.net/msf.353-356.295

中图分类号：

学科分类号：

摘要：

Silicon carbide (SiC) single crystal growth was studied by the in-situ observation using x-ray topographic technique. Occurrence and dynamics of defects, dislocations were observed in a real time display and captured as topographic images during sublimation growth (modified Lely method) of SiC crystals. From the analysis of these topographic images, high-density of dislocations and typical large defects, such as micropipes, domain boundaries and macrodefects were investigated. On the basis of our in-situ observation and analysis, we argue that dislocation and nucleation control on the seed crystal during initial growth are of prime importance for producing high quality SiC crystals.

引用

页码：295 / 298

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