Ultra thin Indium Tin Oxide films on various substrates by pulsed laser deposition

被引：0

作者：

Sun, XW ^{[1
]}

Kim, DH ^{[1
]}

Kwok, HS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong

来源：

THIN-FILM STRUCTURES FOR PHOTOVOLTAICS | 1998年 / 485卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Indium Tin Oxide (ITO) thin films with low resistivities of 0.1 similar to 0.2 m Omega-cm were deposited on various substrates such as YSZ, glass, and ZnO buffered glass by pulsed laser deposition (PLD). The X-ray rocking curve of crystalline (200) ITO films grown on (100) YSZ had a FWHM as narrow as 0.08 degrees. ITO films grown on ZnO (0001) buffered glass had an single (222) orientation and the X-ray rocking curve had a FWHM of 2.1 degrees. Ultrathin ITO films of 3.6nm were fabricated on YSZ and their electrical properties were measured from 10K-300K. ITO films fabricated on ZnO buffered glass and bare glass were characterized by Hall effect measurements as a function of temperature. The results indicate that the resistivity of ITO films grown by PLD does not depend on the orientation or the structure of the thin film. The resistivity is dominated by impurity scattering in the range of 10K-300K. We show that ZnO/glass is a good alternative to bare glass for producing commercial ITO films.

引用

页码：267 / 272

页数：6

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