Electronic properties of F/Zr co-doped anatase TiO2 photocatalysts from GGA plus U calculations

被引:26
|
作者
Long, Run
English, Niall J. [1 ]
机构
[1] Univ Coll Dublin, SEC Strateg Res Cluster, Dublin 4, Ireland
关键词
TITANIUM-DIOXIDE; ION-IMPLANTATION; OXIDE; DEFECTS;
D O I
10.1016/j.cplett.2010.09.006
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The energetic and electronic properties of F and/or Zr-doped anatase TiO2 are investigated by first-principles calculations. For F-doping, reduced Ti3+ ions are formed and Ti orbitals lie slightly below the conduction band, leading to band gap narrowing. For Zr-doping, Zr 4d orbitals reside well into the conduction band, with essentially no band gap change. For F/Zr-codoping, the electronic structure is similar to that for F-monodoping, where Ti3+ gap states are induced by both the oxygen vacancy and F dopant. The influence of oxygen vacancies indicates that interplay between dopants and oxygen vacancies is key for improvement of photocatalytic activity. The theoretical findings present a reasonable explanation of recent experimental results. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:338 / 344
页数:7
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