Electrical transport properties of (Cd,Zn)S thin films

The chemical deposition of Cd1-XZnXS (0 less than or equal to X less than or equal to 0.9) thin films onto the glass substrates and their electrical characterisations are presented in this paper. The temperature dependence of an electrical conductivity (sigma), thermoelectric power (p), carrier concentration (n) and mobility (mu) have been studied and influence of the Zn-concentration on them is explained in terms of Petritz model, wherein the scattering is due to the grain boundaries of the crystallites, The effect of Zn-concentration on activation energies of conductivity (E(a sigma)) and electron density (E(an)), the potential barrier height of grain boundary (Phi(B)) and the grain dimension (d) is also reported. The results indicate that the electrical transport properties of chemically deposited (Cd, Zn)S films are governed by the intergrain barrier height, which is sensitively dependent on the temperature and Zn-concentration.