Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium

被引：8
|
作者：
Terukov, EI
Kudoyarova, VK
Kuznetsov, AN
Fuhs, W
Weiser, G
Kuehne, H
机构：
[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Hahn Meitner Inst Kernforsch Berlin GmbH, D-12489 Berlin, Germany
[3] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷
基金：
俄罗斯基础研究基金会;
关键词：
room temperature; photoluminescence; silicon;
D O I：
10.1016/S0022-3093(98)00097-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Room temperature photoluminescence of Er ions at 1.54 mu m corresponding to (4)I(13/2) - (4)I(15/2) transition in the ion f-shell was observed in erbium-doped hydrogenated amorphous silicon carbide films (a-Si(1-x)C(x):H[Er]). Films of a-Si(1-x)C(x):H[Er] were prepared by co-sputtering of graphite and Er targets applying the magnetron-assisted silane-decomposition technique with mixtures of Ar and silane. The composition of films (x) was 0 less than or equal to x less than or equal to 0.29. The concentration of incorporated Er-ions was 6 x 10(19) cm(-3). The excitation mechanism of the Er ions in amorphous hydrogenated silicon carbide doped with erbium is discussed within the framework of the defect related Auger excitation model. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：488 / 492
页数：5
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