A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones

被引：5
|
作者：
Makioka, S
Yoshikawa, N
Kanazawa, K
机构：
[1] Matsushita Electronics Corporation, Electronics Research Laboratory, 1-1 Saiwaicho, Takatsuki, Osaka
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1996年 / 44卷 / 05期
关键词：
D O I：
10.1109/22.493925
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A GaAs MCM power amplifier has been developed for 1.9-GHz digital cordless telephones. Power-added efficiency of 40.2% and P-1 dB Of 22.2 dBm have been obtained at drain supply voltage of 3.6 V. Adoption of the multilayer MCM structure, i.e., multilayer microwave integrated circuits (MuMIC), and on-chip ferroelectric capacitors successfully reduced the GaAs total chip area to be 1.1 mm(2). We consider that the MuMIC is the most effective candidate for high frequency circuits.
引用
收藏
页码：717 / 722
页数：6
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