Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range

被引：22
|
作者：
Rodriguez, JB [1 ]
Christol, P [1 ]
Ouvrard, A [1 ]
Chevrier, F [1 ]
Grech, P [1 ]
Joullié, A [1 ]
机构：
[1] Univ Montpellier 2, CEM2, UMR 5507, CNRS, F-34095 Montpellier, France
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 06期
关键词：
D O I：
10.1049/el:20058045
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A p-i-n superlattice photovoltaic detector is presented, operating uncooled in the 3-5 pm mid-wavelength infrared region. The active zone of the detector device, grown by molecular beam epitaxy on p-type GaSb substrate, is made of 150 periods of strain compensated InAs/InSb/GaSb (10/1/10 monolayers) superlattice (SL). The SL detector exhibited at 293K a cutoff wavelength of 5.9 mu m, an absorption coefficient of 5 x 10(3) cm(-1) and a responsivity of 0.7 mA/W at 3.5 mu m.
引用
收藏
页码：362 / 363
页数：2
相关论文
共 50 条
  • [31] Low-frequency noise versus deep level transient spectroscopy of InAs/GaSb superlattice mid-wavelength infrared detectors
    Ciura, L.
    Kolek, A.
    Wrobel, J.
    Martyniuk, P.
    2017 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2017,
  • [32] Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
    Wu, Donghai
    Li, Jiakai
    Dehzangi, Arash
    Razeghi, Manijeh
    AIP ADVANCES, 2020, 10 (02)
  • [33] Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range
    Wei, YJ
    Hood, A
    Yau, HP
    Gin, A
    Razeghi, M
    Tidrow, MZ
    Nathan, V
    APPLIED PHYSICS LETTERS, 2005, 86 (23) : 1 - 3
  • [34] Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications
    Wei, Y
    Gin, A
    Razeghi, M
    Brown, GJ
    APPLIED PHYSICS LETTERS, 2002, 80 (18) : 3262 - 3264
  • [35] Low-frequency noise in mid-wavelength infrared InAs/GaSb type-II superlattice based focal plane arrays
    Razeghi, M.
    Haddadi, A.
    Chen, G.
    Hoang, A. M.
    Chevallier, R.
    Callewaert, F.
    INFRARED TECHNOLOGY AND APPLICATIONS XL, 2014, 9070
  • [36] Long wavelength infrared detector based on Type-II InAs/GaSb superlattice
    Zhou Yi
    Chen Jian-Xin
    Xu Qing-Qing
    Xu Zhi-Cheng
    Jin Chuan
    Xu Jia-Jia
    Jin Ju-Peng
    He Li
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2013, 32 (03) : 210 - +
  • [37] InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy
    Chen, Jianxin
    Zhou, Yi
    Xu, Zhicheng
    Xu, Jiajia
    Xu, Qingqing
    Chen, Honglei
    He, Li
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 596 - 599
  • [38] Mid-wavelength infrared unipolar nBp superlattice photodetector
    Kazemi, Alireza
    Myers, Stephen
    Taghipour, Zahra
    Mathews, Sen
    Schuler-Sandy, Ted
    Lee, Seunghyun
    Cowan, Vincent M.
    Garduno, Eli
    Steenbergen, Elizabeth
    Morath, Christian
    Ariyawansa, Gamini
    Scheihing, John
    Krishna, Sanjay
    INFRARED PHYSICS & TECHNOLOGY, 2018, 88 : 114 - 118
  • [39] Fabrication and performance of InAs/GaSb type-II superlattices Mid-wavelength infrared detectors
    Yang Li-peng
    Deng Jun
    Shi Yan-li
    Chen Yong-yuan
    Wu Bo
    INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2013: INFRARED IMAGING AND APPLICATIONS, 2013, 8907
  • [40] Temperature dependence of diffusion length and mobility in mid-wavelength InAs/InAsSb superlattice infrared detectors
    Soibel, Alexander
    Ting, David Z.
    Fisher, Anita M.
    Khoshakhlagh, Arezou
    Pepper, Brian
    Gunapala, Sarath D.
    APPLIED PHYSICS LETTERS, 2020, 117 (23)
12345