Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range

被引：22
|
作者：
Rodriguez, JB [1 ]
Christol, P [1 ]
Ouvrard, A [1 ]
Chevrier, F [1 ]
Grech, P [1 ]
Joullié, A [1 ]
机构：
[1] Univ Montpellier 2, CEM2, UMR 5507, CNRS, F-34095 Montpellier, France
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 06期
关键词：
D O I：
10.1049/el:20058045
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A p-i-n superlattice photovoltaic detector is presented, operating uncooled in the 3-5 pm mid-wavelength infrared region. The active zone of the detector device, grown by molecular beam epitaxy on p-type GaSb substrate, is made of 150 periods of strain compensated InAs/InSb/GaSb (10/1/10 monolayers) superlattice (SL). The SL detector exhibited at 293K a cutoff wavelength of 5.9 mu m, an absorption coefficient of 5 x 10(3) cm(-1) and a responsivity of 0.7 mA/W at 3.5 mu m.
引用
收藏
页码：362 / 363
页数：2
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