A Monte Carlo simulation study on the image resolution in scanning electron microscopy

被引:9
|
作者
Mao, S. F. [1 ]
Ding, Z. J. [1 ]
机构
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Phys, Hefei 230026, Anhui, Peoples R China
关键词
resolution; scanning electron microscopy; image; Monte Carlo simulation; SECONDARY-ELECTRON; SEM; EMISSION; PERFORMANCE; CONTRAST; NOISE; MODEL;
D O I
10.1002/sia.3340
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The resolution of the scanning electron microscope limited by the beam-sample interaction is studied by Monte Carlo simulation. The simulation model is based on the full Penn algorithm for electron inelastic scattering and the associated secondary electron generation as well as on a constructive solid geometry modeling of a complex sample structure. The line-scan profiles for gold nanoparticles of different diameters on a carbon substrate are obtained in the simulation. The gap method and contrast-to-gradient (C-G) method performed for two separated particles of the same size and different sizes are considered to determine the resolution. Both methods are applied to the simulated images. A comparison on the obtained resolutions performed for the different sample topographies shows that the gap resolution depends excessively on the topography by the shading effect and gap method underestimates the influence of probe size, while C-G method overestimates this influence. Copyright (C) 2010 John Wiley & Sons, Ltd.
引用
收藏
页码:1096 / 1099
页数:4
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