Simple technique for direct patterning of nanowires using a nanoslit shadow-mask

被引:0
|
作者
Tong, H. D. [1 ]
Jansen, H. V. [1 ]
Tas, N. R. [1 ]
Gadgil, V. J. [1 ]
Carlen, E. T. [1 ]
van den Berg, A. [1 ]
机构
[1] Univ Twente, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands
关键词
nanowires; nanofabrication; focused-ion-beam machining; nanoslit shadow-mask;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nanowires of various lengths and widths have been fabricated using a wafer-scale shadow mask with deposition windows, or nanoslits, created with focused ion beam machining. Metallic nanowires with widths down to 50 nm and lengths up to 100 mu m have been realized. Measurements of electrical I-V characteristics show linear behavior of nanowires with widths and thickness each around 50 nm.
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页数:2
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